t o ? 92s 1. emitter 2. col lector 3. base jiangsu changjiang ele ctron ics technology co., ltd t o-92s plastic-encapsulate transistors 2SA821S transist or (pnp) features z high breakdown voltage maximum ratings (t a =25 unless other wise noted) electrical characteristics (t a =25 unless other wise specified) parameter symbol test conditions min typ max unit co llector-base breakdown voltage v (b r)cbo i c = -0.05ma,i e = 0 -210 v co llector-emitter breakdown voltage v (b r)ceo i c = -0.1ma,i b = 0 -210 v emitter-b ase breakdown voltage v ( br)ebo i e = -0.05ma,i c =0 -5 v co llector cut-off current i cb o v cb = -150v,i e =0 -1 a emitter cut-off current i ebo v eb = -4.5v,i c =0 -1 a dc cu rrent gain h fe v ce =-3 v, i c = -5ma 56 270 co llector-emitter saturation voltage v ce (sat) i c =-2 ma,i b = -0.2ma -0.6 v co llector output capacitance c ob v cb = -10v,i e =0 , f=1mhz 8 pf t ransition frequency f t v ce =-5 v,i c =-2 ma 50 mhz classifica tion of h fe ra nk n p q ra nge 56-120 82-180 120-270 symbol para meter value unit v cbo coll ector-base voltage -210 v v ce o coll ector-emitter voltage -210 v v eb o emitter-base v oltage -5 v i c coll ector current -0.03 a p c coll ector power dissipation 250 mw r ja t hermal resistance from junction to ambient 500 / w t j junctio n temperature 150 t st g s torage temperature -55~+150 j c ( t www.cj-elec.com 1 www.cj-elec.com 1 3 2 a,jun,2014 d , jul ,2016
www.cj-elec.com a,jun,2014 www.cj-elec.com ' , - x o ,2016 sy mbol d i mensions in millimeters dimensions in inches min. max. min. max. a 1.420 1.620 0.056 0.064 a1 0.660 0.860 0.026 0.034 b 0.330 0.480 0.013 0.019 b1 0.400 0.510 0.016 0.020 c 0.330 0.510 0.013 0.020 d 3.900 4.100 0.154 0.161 d1 2.280 2.680 0.090 0.106 e 3.050 3.250 0.120 0.128 e 1.270 typ. 0.050 typ. e1 2.440 2.640 0.096 0.104 l 15.100 15.500 0.594 0.610 45 typ. 45 typ.
ww.cj-elec.com 3 a,jun,2014 www.cj-elec.com d,jul,2016
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